AM4392N-T1 Todos los transistores

 

AM4392N-T1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM4392N-T1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.26 typ Ohm

Encapsulados: SO8

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AM4392N-T1 datasheet

 ..1. Size:848K  cn vbsemi
am4392n-t1.pdf pdf_icon

AM4392N-T1

AM4392N-T1 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.260 at VGS = 10 V 3 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS D Primary Side Switch SO-8 SD 1 8 SD 2 7 G SD 3 6 GD 4 5 S Top View N-Chann

 7.1. Size:313K  analog power
am4392n.pdf pdf_icon

AM4392N-T1

Analog Power AM4392N N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 255 @ VGS = 10V 2.9 Low thermal impedance 150 290 @ VGS = 5.5V 2.7 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

 9.1. Size:320K  analog power
am4394n.pdf pdf_icon

AM4392N-T1

Analog Power AM4394N N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 50 @ VGS = 10V 6.5 Low thermal impedance 150 60 @ VGS = 5.5V 5.9 Fast switching speed SO-8 Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

 9.2. Size:192K  analog power
am4390n.pdf pdf_icon

AM4392N-T1

Analog Power AM4390N N-Channel 150V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.625 @ VGS = 10 V 1.9 battery-powered products suc

Otros transistores... AFP2307AS23 , AM20P06-135 , AM2319P-T1 , AM2336N-T1 , AM2339P-T1 , AM2340NE-T1 , AM2358N-T1 , AM3401E3VR , RFP50N06 , AM4929P-T1 , AM4930N-T1 , AM60N10-70PC , AO2301 , AO4602 , AO4606A , AO4614-30V , AO4816 .

History: IRLU110PBF | 2SK1437 | IRLZ24NL

 

 

 

 

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