AM4392N-T1 MOSFET Datasheet: N-Ch, 200V, 3A. Full specification with pinout and replacement list

AM4392N-T1 Specs and Replacement

Type Designator: AM4392N-T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 typ Ohm

Package: SO8

AM4392N-T1 substitution

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AM4392N-T1 datasheet

..1. Size:848K cn vbsemi
am4392n-t1.pdf pdf_icon

AM4392N-T1 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.260 at VGS = 10 V 3 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS D Primary Side Switch SO-8 SD 1 8 SD 2 7 G SD 3 6 GD 4 5 S Top View N-Chann... See More ⇒

7.1. Size:313K analog power
am4392n.pdf pdf_icon

Analog Power AM4392N N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 255 @ VGS = 10V 2.9 Low thermal impedance 150 290 @ VGS = 5.5V 2.7 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI... See More ⇒

9.1. Size:320K analog power
am4394n.pdf pdf_icon

Analog Power AM4394N N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 50 @ VGS = 10V 6.5 Low thermal impedance 150 60 @ VGS = 5.5V 5.9 Fast switching speed SO-8 Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE ... See More ⇒

9.2. Size:192K analog power
am4390n.pdf pdf_icon

Analog Power AM4390N N-Channel 150V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.625 @ VGS = 10 V 1.9 battery-powered products suc... See More ⇒