AP2300GN MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP2300GN datasheet

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AP2300GN www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Conve

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AP2300MI 20V N-Channel Enhancement Mode MOSFET Description The AP2300MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =3.3A DS D R

8.3. Size:1493K cn apm
ap2300ai.pdf pdf_icon

AP2300AI 20V N-Channel Enhancement Mode MOSFET Description The AP2300AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V,I = 3.3A DS D R

Otros transistores... AO2301 , AO4602 , AO4606A , AO4614-30V , AO4816 , AOD438 , AOD522 , AP10P10GH , 75N75 , AP2301N , AP2305GN , AP2306AGN , AP2306N , AP2308GE , AP2309AGN , AP2310GG , AP4565GM-30V .