AP2300GN MOSFET Datasheet: N-Ch, 20V, 5A. Full specification with pinout and replacement list

AP2300GN Specs and Replacement

Type Designator: AP2300GN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 typ Ohm

Package: SOT23

AP2300GN substitution

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AP2300GN datasheet

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AP2300GN www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Conve... See More ⇒

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AP2300MI 20V N-Channel Enhancement Mode MOSFET Description The AP2300MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =3.3A DS D R ... See More ⇒

8.3. Size:1493K cn apm
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AP2300AI 20V N-Channel Enhancement Mode MOSFET Description The AP2300AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V,I = 3.3A DS D R ... See More ⇒

Detailed specifications: AO2301, AO4602, AO4606A, AO4614-30V, AO4816, AOD438, AOD522, AP10P10GH, 75N75, AP2301N, AP2305GN, AP2306AGN, AP2306N, AP2308GE, AP2309AGN, AP2310GG, AP4565GM-30V