FCP25N60NF102 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FCP25N60NF102
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 216 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET FCP25N60NF102

FCP25N60NF102 Datasheet (PDF)

5.1. Size:455K fairchild semi
fcp25n60n f102.pdf

March 2013FCP25N60N_F102N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mFeatures Description RDS(on) = 107 m (Typ.)@ VGS = 10 V, ID = 12.5 AThe SupreMOS MOSFET is Fairchild Semiconductors next-generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC)employing a deep trench filling process that differentiate it from

5.2. Size:697K fairchild semi
fcp25n60n.pdf

November 2013FCP25N60NN-Channel SupreMOS MOSFET600 V, 25 A, 125 mFeatures DescriptionThe SupreMOS MOSFET is Fairchild Semiconductors next RDS(on) = 107 m (Typ.) @ VGS = 10 V, ID = 12.5 Ageneration of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC)employing a deep trench filling process that differentiates it from Low Ef

5.3. Size:805K onsemi
fcp25n60n.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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