FCP25N60NF102 Todos los transistores

 5.1. Size:455K  fairchild semi
 fcp25n60n f102.pdf

March 2013 FCP25N60N_F102 N-Channel SupreMOS MOSFET 600 V, 25 A, 125 m Features Description RDS(on) = 107 m (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS MOSFET is Fairchild Semiconductor s next- generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiate it from

 5.2. Size:697K  fairchild semi
 fcp25n60n.pdf

November 2013 FCP25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 125 m Features Description The SupreMOS MOSFET is Fairchild Semiconductor s next RDS(on) = 107 m (Typ.) @ VGS = 10 V, ID = 12.5 A generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiates it from Low Ef

 5.3. Size:805K  onsemi
 fcp25n60n.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur