Справочник MOSFET. FCP25N60NF102

 

FCP25N60NF102 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FCP25N60NF102
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 216 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.125 Ohm
   Тип корпуса: TO220

 Аналог (замена) для FCP25N60NF102

 

 

FCP25N60NF102 Datasheet (PDF)

 5.1. Size:455K  fairchild semi
 fcp25n60n f102.pdf

FCP25N60NF102 FCP25N60NF102

March 2013FCP25N60N_F102N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mFeatures Description RDS(on) = 107 m (Typ.)@ VGS = 10 V, ID = 12.5 AThe SupreMOS MOSFET is Fairchild Semiconductors next-generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC)employing a deep trench filling process that differentiate it from

 5.2. Size:697K  fairchild semi
 fcp25n60n.pdf

FCP25N60NF102 FCP25N60NF102

November 2013FCP25N60NN-Channel SupreMOS MOSFET600 V, 25 A, 125 mFeatures DescriptionThe SupreMOS MOSFET is Fairchild Semiconductors next RDS(on) = 107 m (Typ.) @ VGS = 10 V, ID = 12.5 Ageneration of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC)employing a deep trench filling process that differentiates it from Low Ef

 5.3. Size:805K  onsemi
 fcp25n60n.pdf

FCP25N60NF102 FCP25N60NF102

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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