FCP25N60NF102 MOSFET. Datasheet pdf. Equivalent
Type Designator: FCP25N60NF102
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 216 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 16 A
Qgⓘ - Total Gate Charge: 57 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO220
FCP25N60NF102 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCP25N60NF102 Datasheet (PDF)
fcp25n60n f102.pdf
March 2013FCP25N60N_F102N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mFeatures Description RDS(on) = 107 m (Typ.)@ VGS = 10 V, ID = 12.5 AThe SupreMOS MOSFET is Fairchild Semiconductors next-generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC)employing a deep trench filling process that differentiate it from
fcp25n60n.pdf
November 2013FCP25N60NN-Channel SupreMOS MOSFET600 V, 25 A, 125 mFeatures DescriptionThe SupreMOS MOSFET is Fairchild Semiconductors next RDS(on) = 107 m (Typ.) @ VGS = 10 V, ID = 12.5 Ageneration of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC)employing a deep trench filling process that differentiates it from Low Ef
fcp25n60n.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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