C3028LD Todos los transistores

 ..1. Size:1031K  cn vbsemi
 c3028ld.pdf

C3028LD www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VGS

 8.1. Size:259K  diodes
 dmc3028lsdx.pdf

DMC3028LSDX Electrical Characteristics Q2 (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250 A Zero Gate Voltage Drain Current IDSS -1 A VDS = -24V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS

 8.2. Size:345K  diodes
 dmc3028lsd.pdf

A Product Line of Diodes Incorporated DMC3028LSD 30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID Device V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green Component and RoHS Compliant (Note 1) 28m @ VGS= 10V 7.1A Q1 30V 45m @ VGS=