C3028LD Specs and Replacement
Type Designator: C3028LD
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 typ Ohm
Package: SO8
C3028LD substitution
- MOSFET ⓘ Cross-Reference Search
C3028LD datasheet
c3028ld.pdf
C3028LD www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VGS ... See More ⇒
dmc3028lsdx.pdf
DMC3028LSDX Electrical Characteristics Q2 (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250 A Zero Gate Voltage Drain Current IDSS -1 A VDS = -24V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS ... See More ⇒
dmc3028lsd.pdf
A Product Line of Diodes Incorporated DMC3028LSD 30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID Device V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green Component and RoHS Compliant (Note 1) 28m @ VGS= 10V 7.1A Q1 30V 45m @ VGS= ... See More ⇒
Detailed specifications: APM4953KC, APM7313KC, APM7318KC, APM8010KC, APM9435KC, APM9945KC, BSC019N04NS, BUK9832-55, 2SK3878, CEA3055, CEA3055L, CEG8205, CEM4936, CEM4946, CEM9926, CEM9956A, CEU20N06
Keywords - C3028LD MOSFET specs
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