C3028LDwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS

DMC3028LSDX Electrical Characteristics Q2 (@TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250A Zero Gate Voltage Drain Current IDSS -1 A VDS = -24V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS

A Product Line ofDiodes IncorporatedDMC3028LSD30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID Device V(BR)DSS RDS(on) Fast switching speed TA = 25C Green Component and RoHS Compliant (Note 1) 28m @ VGS= 10V 7.1A Q1 30V45m @ VGS=