FDN335N-NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDN335N-NL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028(typ) Ohm
   Paquete / Cubierta: SOT23

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FDN335N-NL Datasheet (PDF)

..1. Size:1707K cn vbsemi
fdn335n-nl.pdf

FDN335N-NLwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D

7.1. Size:81K fairchild semi
fdn335n.pdf

April 1999FDN335NN-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral Description Features 1.7 A, 20 V. RDS(ON) = 0.07 @ VGS = 4.5 VThis N-Channel 2.5V specified MOSFET is producedusing Fairchild Semiconductor's advanced PowerTrenchRDS(ON) = 0.100 @ VGS = 2.5 V.process that has been especially tailored to minimize theon-state resistance and yet maintain low gate cha

7.2. Size:198K onsemi
fdn335n.pdf

FDN335NN-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral Description Features 1.7 A, 20 V. RDS(ON) = 0.07 @ VGS = 4.5 VThis N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench RDS(ON) = 0.100 @ VGS = 2.5 V.process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for Lo

7.3. Size:1905K htsemi
fdn335n.pdf

FDN335N20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70m RDS(ON), Vgs@ 2.5V, Ids@ 1.5A= 100m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSSOT-23(PACKAGE)Millimeter MillimeterREF. REF. Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00

7.4. Size:379K umw-ic
fdn335n.pdf

RUMW UMW FDN335NMOSFETSSOT-23 Plastic-Encapsulate FDN335N N-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX ID70m@ 4.5V20 V1.7A100m@ 2.5VFEATUREAPPLICATION TrenchFET Power MOSFET Battery protection SOT23 Supper high density cell design Load switch Battery management MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN Maximum ra

7.5. Size:422K huashuo
fdn335n.pdf

FDN335N N-Ch 20V Fast Switching MOSFETs Product Summary Description The FDN335N is the high cell density trenched V 20 V DSN-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small R 46 m DS(ON),typpower switching and load switch applications. I 3 A DThe FDN335N meets the RoHS and Green Product requirement with full function reliability

7.6. Size:399K cn shikues
fdn335n.pdf

FDN335NN-Channel Enhancement Mode MOSFETFeature 20V/2.0A, RDS(ON) = 80m(MAX) @VGS = 4.5V. RDS(ON) = 90m(MAX) @VGS = 2.5V.Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. Applications Power Management Portable Equipment and Battery Powered Systems. S O T - 2 3 Absolute Maximum Ratings TA

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