FDN335N-NL PDF and Equivalents Search

 ..1. Size:1707K  cn vbsemi
 fdn335n-nl.pdf

FDN335N-NL www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/D... See More ⇒

 7.1. Size:81K  fairchild semi
 fdn335n.pdf

April 1999 FDN335N N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features 1.7 A, 20 V. RDS(ON) = 0.07 @ VGS = 4.5 V This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.100 @ VGS = 2.5 V. process that has been especially tailored to minimize the on-state resistance and yet maintain low gate cha... See More ⇒

 7.2. Size:198K  onsemi
 fdn335n.pdf

FDN335N N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features 1.7 A, 20 V. RDS(ON) = 0.07 @ VGS = 4.5 V This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench RDS(ON) = 0.100 @ VGS = 2.5 V. process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for Lo... See More ⇒

 7.3. Size:1905K  htsemi
 fdn335n.pdf

FDN335N 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70m RDS(ON), Vgs@ 2.5V, Ids@ 1.5A= 100m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00... See More ⇒

 7.4. Size:379K  umw-ic
 fdn335n.pdf

R UMW UMW FDN335N MOSFETS SOT-23 Plastic-Encapsulate FDN335N N-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 70m @ 4.5V 20 V 1.7A 100m @ 2.5V FEATURE APPLICATION TrenchFET Power MOSFET Battery protection SOT 23 Supper high density cell design Load switch Battery management MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN Maximum ra... See More ⇒

 7.5. Size:422K  huashuo
 fdn335n.pdf

FDN335N N-Ch 20V Fast Switching MOSFETs Product Summary Description The FDN335N is the high cell density trenched V 20 V DS N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small R 46 m DS(ON),typ power switching and load switch applications. I 3 A D The FDN335N meets the RoHS and Green Product requirement with full function reliability ... See More ⇒

 7.6. Size:399K  cn shikues
 fdn335n.pdf

FDN335N N-Channel Enhancement Mode MOSFET Feature 20V/2.0A, RDS(ON) = 80m (MAX) @VGS = 4.5V. RDS(ON) = 90m (MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. Applications Power Management Portable Equipment and Battery Powered Systems. S O T - 2 3 Absolute Maximum Ratings TA... See More ⇒