FDN335N-NL - описание и поиск аналогов

FDN335N-NL www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/D

April 1999 FDN335N N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features 1.7 A, 20 V. RDS(ON) = 0.07 @ VGS = 4.5 V This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.100 @ VGS = 2.5 V. process that has been especially tailored to minimize the on-state resistance and yet maintain low gate cha

FDN335N N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features 1.7 A, 20 V. RDS(ON) = 0.07 @ VGS = 4.5 V This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench RDS(ON) = 0.100 @ VGS = 2.5 V. process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for Lo

FDN335N 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70m RDS(ON), Vgs@ 2.5V, Ids@ 1.5A= 100m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00

R UMW UMW FDN335N MOSFETS SOT-23 Plastic-Encapsulate FDN335N N-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 70m @ 4.5V 20 V 1.7A 100m @ 2.5V FEATURE APPLICATION TrenchFET Power MOSFET Battery protection SOT 23 Supper high density cell design Load switch Battery management MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN Maximum ra

FDN335N N-Ch 20V Fast Switching MOSFETs Product Summary Description The FDN335N is the high cell density trenched V 20 V DS N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small R 46 m DS(ON),typ power switching and load switch applications. I 3 A D The FDN335N meets the RoHS and Green Product requirement with full function reliability

FDN335N N-Channel Enhancement Mode MOSFET Feature 20V/2.0A, RDS(ON) = 80m (MAX) @VGS = 4.5V. RDS(ON) = 90m (MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. Applications Power Management Portable Equipment and Battery Powered Systems. S O T - 2 3 Absolute Maximum Ratings TA