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FDN338P-NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDN338P-NL
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035(typ) Ohm
   Paquete / Cubierta: SOT23
     - Selección de transistores por parámetros

 

FDN338P-NL Datasheet (PDF)

 ..1. Size:869K  cn vbsemi
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FDN338P-NL

FDN338P-NLwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI

 7.1. Size:267K  fairchild semi
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FDN338P-NL

September 2001 FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses 1.6 A, 20 V. R = 115 m @ V = 4.5 V DS(ON) GSFairchilds advanced low voltage PowerTrench process. R = 155 m @ V = 2.5 V DS(ON) GSIt has been optimized for battery power management applications. Fast switchi

 7.2. Size:321K  onsemi
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FDN338P-NL

November 2013FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses 1.6 A, 20 V. R = 115 m @ V = 4.5 V DS(ON) GSFairchilds advanced low voltage PowerTrench process. R = 155 m @ V = 2.5 V DS(ON) GSIt has been optimized for battery power management applications. Fast switching

 7.3. Size:1909K  htsemi
fdn338p.pdf pdf_icon

FDN338P-NL

FDN338P20V P-Channel Enhancement Mode MOSFET VDS= -20V 115mRDS(ON), Vgs@-4.5V, Ids@-1.6A= RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSSOT-23(PACKAGE)Millimeter MillimeterREF. REF. Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: STM4460 | ET6309 | IRL2910 | AP2312GN | IRF8852 | P1560JF | CEF02N6A

 

 
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