FDN338P-NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDN338P-NL
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 4.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
Carga de la puerta (Qg): 10 nC
Tiempo de subida (tr): 20 nS
Conductancia de drenaje-sustrato (Cd): 180 pF
Resistencia entre drenaje y fuente RDS(on): 0.035(typ) Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET FDN338P-NL
FDN338P-NL Datasheet (PDF)
fdn338p-nl.pdf
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FDN338P-NLwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI
fdn338p.pdf
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September 2001 FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses 1.6 A, 20 V. R = 115 m @ V = 4.5 V DS(ON) GSFairchilds advanced low voltage PowerTrench process. R = 155 m @ V = 2.5 V DS(ON) GSIt has been optimized for battery power management applications. Fast switchi
fdn338p.pdf
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November 2013FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses 1.6 A, 20 V. R = 115 m @ V = 4.5 V DS(ON) GSFairchilds advanced low voltage PowerTrench process. R = 155 m @ V = 2.5 V DS(ON) GSIt has been optimized for battery power management applications. Fast switching
fdn338p.pdf
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FDN338P20V P-Channel Enhancement Mode MOSFET VDS= -20V 115mRDS(ON), Vgs@-4.5V, Ids@-1.6A= RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSSOT-23(PACKAGE)Millimeter MillimeterREF. REF. Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.
fdn338p.pdf
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RUMW UMW FDN338PUMW FDN338PSOT-23 Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFET FDN338SOT23 IDV(BR)DSS RDS(on)MAX 112m@-4.5V-20VA-2.8142m@-2.5V1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET zzLoad Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit 338Maximum ratings (Ta=25 u
fdn338p.pdf
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FDN338P P-Ch 20V Fast Switching MOSFETs Description Product Summary The FDN338P is the high cell density trenched P-VDS -20 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 89 m and load switch applications. ID -3 A The FDN338P meet the RoHS and Green Product requirement with full function reliability approved.
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