FDN338P-NL MOSFET. Datasheet pdf. Equivalent

   Type Designator: FDN338P-NL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ) Ohm
   Package: SOT23

FDN338P-NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FDN338P-NL Datasheet (PDF)

..1. Size:869K cn vbsemi
fdn338p-nl.pdf

FDN338P-NLwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI

7.1. Size:267K fairchild semi
fdn338p.pdf

September 2001 FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses 1.6 A, 20 V. R = 115 m @ V = 4.5 V DS(ON) GSFairchilds advanced low voltage PowerTrench process. R = 155 m @ V = 2.5 V DS(ON) GSIt has been optimized for battery power management applications. Fast switchi

7.2. Size:321K onsemi
fdn338p.pdf

November 2013FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses 1.6 A, 20 V. R = 115 m @ V = 4.5 V DS(ON) GSFairchilds advanced low voltage PowerTrench process. R = 155 m @ V = 2.5 V DS(ON) GSIt has been optimized for battery power management applications. Fast switching

7.3. Size:1909K htsemi
fdn338p.pdf

FDN338P20V P-Channel Enhancement Mode MOSFET VDS= -20V 115mRDS(ON), Vgs@-4.5V, Ids@-1.6A= RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSSOT-23(PACKAGE)Millimeter MillimeterREF. REF. Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.

7.4. Size:596K umw-ic
fdn338p.pdf

RUMW UMW FDN338PUMW FDN338PSOT-23 Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFET FDN338SOT23 IDV(BR)DSS RDS(on)MAX 112m@-4.5V-20VA-2.8142m@-2.5V1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET zzLoad Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit 338Maximum ratings (Ta=25 u

7.5. Size:498K huashuo
fdn338p.pdf

FDN338P P-Ch 20V Fast Switching MOSFETs Description Product Summary The FDN338P is the high cell density trenched P-VDS -20 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 89 m and load switch applications. ID -3 A The FDN338P meet the RoHS and Green Product requirement with full function reliability approved.

7.6. Size:714K cn shikues
fdn338p.pdf