FDS4936 Todos los transistores

 

FDS4936 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS4936

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.78 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 117 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 typ Ohm

Encapsulados: SO8

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FDS4936 datasheet

 ..1. Size:833K  cn vbsemi
fds4936.pdf pdf_icon

FDS4936

FDS4936 www.VBsemi.tw Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box

 8.1. Size:113K  fairchild semi
fds4935a.pdf pdf_icon

FDS4936

March 2002 FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 7 A, 30 V RDS(ON) = 23 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 35 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ran

 8.2. Size:158K  fairchild semi
fds4935bz.pdf pdf_icon

FDS4936

September 2006 tm FDS4935BZ Dual 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery

 8.3. Size:154K  onsemi
fds4935bz.pdf pdf_icon

FDS4936

September 2006 tm FDS4935BZ Dual 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery

Otros transistores... FDN337N-NL , FDN338P-NL , FDS4435-NL , FDS4450 , FDS4465-NL-9 , FDS4685-NL , FDS4897A , FDS4935BZ-NL-38 , IRLB3034 , FDS6675B , FDS8333C , FDS8435A , FDS8984-NL , FDS9435 , FDS9435A-NL , FDS9945-NL , FDT1600N10A .

History: 2SK3404-ZJ | NTLJS4114N | MDS5601URH | 2SJ326-Z | AOC2414

 

 

 

 

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