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FDS4936 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDS4936
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.78 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 117 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022(typ) Ohm
   Paquete / Cubierta: SO8
 

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FDS4936 Datasheet (PDF)

 ..1. Size:833K  cn vbsemi
 fds4936.pdf pdf_icon

FDS4936

FDS4936www.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

 8.1. Size:113K  fairchild semi
 fds4935a.pdf pdf_icon

FDS4936

March 2002 FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 7 A, 30 V RDS(ON) = 23 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 35 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ran

 8.2. Size:158K  fairchild semi
 fds4935bz.pdf pdf_icon

FDS4936

September 2006tmFDS4935BZDual 30 Volt P-Channel PowerTrench MOSFET General Description FeaturesThis P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery

 8.3. Size:154K  onsemi
 fds4935bz.pdf pdf_icon

FDS4936

September 2006tmFDS4935BZDual 30 Volt P-Channel PowerTrench MOSFET General Description FeaturesThis P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery

MOSTRAR MÁS

Otros transistores... FDN337N-NL , FDN338P-NL , FDS4435-NL , FDS4450 , FDS4465-NL-9 , FDS4685-NL , FDS4897A , FDS4935BZ-NL-38 , EMB04N03H , FDS6675B , FDS8333C , FDS8435A , FDS8984-NL , FDS9435 , FDS9435A-NL , FDS9945-NL , FDT1600N10A .

History: SM7518NSU | IRFI830G | VS3640DE | OSG65R290FEF | AO4607 | SFU9220 | WMB034N06LG4

 

 
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