FDS4936 MOSFET Datasheet: N-Ch, 30V, 6.2A. Full specification with pinout and replacement list

FDS4936 Specs and Replacement

Type Designator: FDS4936

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 117 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 typ Ohm

Package: SO8

FDS4936 substitution

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FDS4936 datasheet

..1. Size:833K cn vbsemi
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FDS4936 www.VBsemi.tw Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box ... See More ⇒

8.1. Size:113K fairchild semi
fds4935a.pdf pdf_icon

March 2002 FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 7 A, 30 V RDS(ON) = 23 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 35 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ran... See More ⇒

8.2. Size:158K fairchild semi
fds4935bz.pdf pdf_icon

September 2006 tm FDS4935BZ Dual 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery... See More ⇒

8.3. Size:154K onsemi
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