FL014N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FL014N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.5 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 2.7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 22 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 120 pF
Resistencia entre drenaje y fuente RDS(on): 0.076(typ) Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de MOSFET FL014N
FL014N Datasheet (PDF)
fl014n.pdf
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FL014Nwww.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless
irfl014npbf.pdf
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PD- 95352IRFL014NPbFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.16l Fully Avalanche RatedGl Lead-FreeID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on
auirfl014n.pdf
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AUTOMOTIVE GRADEAUIRFL014NHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-ResistanceV(BR)DSS 55V Dynamic dV/dT Rating 150C Operating TemperatureRDS(on) max.0.16G Fast Switching Fully Avalanche RatedS Repetitive Avalanche Allowed up to Tjmax ID 1.9A Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed f
irfl014n.pdf
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PD- 92003AIRFL014NHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.16 Fast SwitchingG Fully Avalanche RatedID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silic
irfl014npbf.pdf
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PD- 95352IRFL014NPbFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.16l Fully Avalanche RatedGl Lead-FreeID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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![FL014N](https://alltransistors.com/images/ru.png)
Liste
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