FL014N MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FL014N datasheet

..1. Size:924K cn vbsemi
fl014n.pdf pdf_icon

FL014N www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 10 V 4.5 RoHS 10 nC COMPLIANT 60 APPLICATIONS 0.085 at VGS = 4.5 V 3.5 Load Switches for Portable Devices D SOT-223-3 D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless

0.1. Size:158K international rectifier
irfl014npbf.pdf pdf_icon

PD- 95352 IRFL014NPbF HEXFET Power MOSFET l Surface Mount l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l Dynamic dv/dt Rating l Fast Switching RDS(on) = 0.16 l Fully Avalanche Rated G l Lead-Free ID = 1.9A S Description Fifth Generation HEXFET MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on

0.2. Size:215K international rectifier
auirfl014n.pdf pdf_icon

AUTOMOTIVE GRADE AUIRFL014N HEXFET Power MOSFET Features Advanced Planar Technology D Low On-Resistance V(BR)DSS 55V Dynamic dV/dT Rating 150 C Operating Temperature RDS(on) max. 0.16 G Fast Switching Fully Avalanche Rated S Repetitive Avalanche Allowed up to Tjmax ID 1.9A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed f

0.3. Size:144K international rectifier
irfl014n.pdf pdf_icon

PD- 92003A IRFL014N HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.16 Fast Switching G Fully Avalanche Rated ID = 1.9A S Description Fifth Generation HEXFET MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silic

Otros transistores... FDS8333C , FDS8435A , FDS8984-NL , FDS9435 , FDS9435A-NL , FDS9945-NL , FDT1600N10A , FDW2601NZ , 60N06 , FNK10N25B , FQD13N10LTF , FQD20N06LE , FQU13N06 , FQU13N10 , FR120N , FR2307Z , FR5305 .