All MOSFET. FL014N Datasheet

 

FL014N MOSFET. Datasheet pdf. Equivalent


   Type Designator: FL014N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 2.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.076(typ) Ohm
   Package: SOT223

 FL014N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FL014N Datasheet (PDF)

 ..1. Size:924K  cn vbsemi
 fl014n.pdf

FL014N FL014N

FL014Nwww.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless

 0.1. Size:158K  international rectifier
 irfl014npbf.pdf

FL014N FL014N

PD- 95352IRFL014NPbFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.16l Fully Avalanche RatedGl Lead-FreeID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on

 0.2. Size:215K  international rectifier
 auirfl014n.pdf

FL014N FL014N

AUTOMOTIVE GRADEAUIRFL014NHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-ResistanceV(BR)DSS 55V Dynamic dV/dT Rating 150C Operating TemperatureRDS(on) max.0.16G Fast Switching Fully Avalanche RatedS Repetitive Avalanche Allowed up to Tjmax ID 1.9A Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed f

 0.3. Size:144K  international rectifier
 irfl014n.pdf

FL014N FL014N

PD- 92003AIRFL014NHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.16 Fast SwitchingG Fully Avalanche RatedID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silic

 0.4. Size:158K  infineon
 irfl014npbf.pdf

FL014N FL014N

PD- 95352IRFL014NPbFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.16l Fully Avalanche RatedGl Lead-FreeID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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