FQD13N10LTF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQD13N10LTF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 96 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 15 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 24 nC
Tiempo de subida (tr): 50 nS
Conductancia de drenaje-sustrato (Cd): 120 pF
Resistencia entre drenaje y fuente RDS(on): 0.114(typ) Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET FQD13N10LTF
FQD13N10LTF Datasheet (PDF)
fqd13n10ltf.pdf
FQD13N10LTFwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATIN
fqd13n10l fqu13n10l.pdf
January 2009QFETFQD13N10L / FQU13N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.7 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology is especi
fqd13n10l fqu13n10l.pdf
January 2014FQD13N10L / FQU13N10LN-Channel QFET MOSFET100 V, 10 A, 180 mDescription FeaturesThis N-Channel enhancement mode power MOSFET 10 A, 100 V, RDS(on) = 180 m (Max.) @ VGS = 10 V,is produced using Fairchild Semiconductors proprietary ID = 5.0 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 8.7 nC)MOSFET technology has been
fqd13n10l.pdf
FQD13N10Lwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING
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