FQD13N10LTF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQD13N10LTF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 96 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 120 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.114 typ Ohm
Encapsulados: TO252
Búsqueda de reemplazo de FQD13N10LTF MOSFET
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FQD13N10LTF datasheet
fqd13n10ltf.pdf
FQD13N10LTF www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATIN
fqd13n10l fqu13n10l.pdf
January 2009 QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 100V, RDS(on) = 0.18 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.7 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology is especi
fqd13n10l fqu13n10l.pdf
January 2014 FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 m Description Features This N-Channel enhancement mode power MOSFET 10 A, 100 V, RDS(on) = 180 m (Max.) @ VGS = 10 V, is produced using Fairchild Semiconductor s proprietary ID = 5.0 A planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 8.7 nC) MOSFET technology has been
fqd13n10l.pdf
FQD13N10L www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING
Otros transistores... FDS8984-NL , FDS9435 , FDS9435A-NL , FDS9945-NL , FDT1600N10A , FDW2601NZ , FL014N , FNK10N25B , AO4468 , FQD20N06LE , FQU13N06 , FQU13N10 , FR120N , FR2307Z , FR5305 , FR5505 , FR9N20D .
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