FQD13N10LTF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQD13N10LTF Datasheet (PDF)

..1. Size:884K cn vbsemi
fqd13n10ltf.pdf pdf_icon

FQD13N10LTFwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATIN

5.1. Size:630K fairchild semi
fqd13n10l fqu13n10l.pdf pdf_icon

January 2009QFETFQD13N10L / FQU13N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.7 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology is especi

5.2. Size:1231K onsemi
fqd13n10l fqu13n10l.pdf pdf_icon

January 2014FQD13N10L / FQU13N10LN-Channel QFET MOSFET100 V, 10 A, 180 mDescription FeaturesThis N-Channel enhancement mode power MOSFET 10 A, 100 V, RDS(on) = 180 m (Max.) @ VGS = 10 V,is produced using Fairchild Semiconductors proprietary ID = 5.0 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 8.7 nC)MOSFET technology has been

5.3. Size:847K cn vbsemi
fqd13n10l.pdf pdf_icon

FQD13N10Lwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING

Otros transistores... FDS8984-NL , FDS9435 , FDS9435A-NL , FDS9945-NL , FDT1600N10A , FDW2601NZ , FL014N , FNK10N25B , IRFP064N , FQD20N06LE , FQU13N06 , FQU13N10 , FR120N , FR2307Z , FR5305 , FR5505 , FR9N20D .