All MOSFET. FQD13N10LTF Datasheet

 

FQD13N10LTF Datasheet and Replacement


   Type Designator: FQD13N10LTF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 24 nC
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.114(typ) Ohm
   Package: TO252
 

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FQD13N10LTF Datasheet (PDF)

 ..1. Size:884K  cn vbsemi
 fqd13n10ltf.pdf pdf_icon

FQD13N10LTF

FQD13N10LTFwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATIN

 5.1. Size:630K  fairchild semi
 fqd13n10l fqu13n10l.pdf pdf_icon

FQD13N10LTF

January 2009QFETFQD13N10L / FQU13N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.7 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology is especi

 5.2. Size:1231K  onsemi
 fqd13n10l fqu13n10l.pdf pdf_icon

FQD13N10LTF

January 2014FQD13N10L / FQU13N10LN-Channel QFET MOSFET100 V, 10 A, 180 mDescription FeaturesThis N-Channel enhancement mode power MOSFET 10 A, 100 V, RDS(on) = 180 m (Max.) @ VGS = 10 V,is produced using Fairchild Semiconductors proprietary ID = 5.0 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 8.7 nC)MOSFET technology has been

 5.3. Size:847K  cn vbsemi
 fqd13n10l.pdf pdf_icon

FQD13N10LTF

FQD13N10Lwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING

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