FTD2017 Todos los transistores

 ..1. Size:42K  sanyo
 ftd2017.pdf

Ordering number ENN6361 N-Channel Silicon MOSFET FTD2017 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 2.5V drive. 2155A Mounting height 1.1mm. [FTD2017] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 1 4 3 Source1 0.125 4 Gate1 0.25 5 Gate2 6 Source2 7 Source2 8

 ..2. Size:2022K  cn vbsemi
 ftd2017.pdf

FTD2017 www.VBsemi.tw Dual N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.022 at VGS = 4.5 V Available 6.6 25 RoHS* 0.032 at VGS = 2.5 V 5.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RATIN

 0.1. Size:985K  cn vbsemi
 ftd2017a.pdf

FTD2017A www.VBsemi.tw Dual N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.022 at VGS = 4.5 V Available 6.6 25 RoHS* 0.032 at VGS = 2.5 V 5.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RATI

 8.1. Size:41K  sanyo
 ftd2014.pdf

Ordering number ENN6267 N-Channel Silicon MOSFET FTD2014 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 2.5V drive. 2155A Mounting height 1.1mm. [FTD2014] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 1 4 3 Source1 0.125 4 Gate1 0.25 5 Gate2 6 Source2 7 Source2

 8.2. Size:42K  sanyo
 ftd2019.pdf

Ordering number ENN6383 N-Channel Silicon MOSFET FTD2019 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 2.5V drive. 2155A Mounting height 1.1mm. [FTD2019] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 1 4 3 Source1 0.125 4 Gate1 0.25 5 Gate2 6 Source2 7 Source2 8

 8.3. Size:76K  sanyo
 ftd2013.pdf

Ordering number ENN6080A N-Channel Silicon MOSFET FTD2013 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 2.5V drive. 2155A Mounting height 1.1mm. [FTD2013] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 1 4 3 Source1 0.125 4 Gate1 0.25 5 Gate2 6 Source2 7 Source2

 8.4. Size:41K  sanyo
 ftd2015.pdf

Ordering number ENN6393 N-Channel Silicon MOSFET FTD2015 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 4V drive. 2155A Mounting height 1.1mm. [FTD2015] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 1 4 3 Source1 0.125 4 Gate1 0.25 5 Gate2 6 Source2 7 Source2 8

 8.5. Size:69K  sanyo
 ftd2011.pdf

Ordering number ENN6072A N-Channel Silicon MOSFET FTD2011 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 2.5V drive. 2155A Mounting height 1.1mm. [FTD2011] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 1 4 3 Source1 0.125 4 Gate1 0.25 5 Gate2 6 Source2 7 Source2

 8.6. Size:76K  kexin
 ftd2019.pdf

SMD Type Transistors Dual N-Channel Enhancement Mode MOSFET FTD2019 TSSOP-8 Features Unit mm RDS(ON)=28m Max. @VGS=4V RDS(ON)=35m Max. @VGS=2.5V 1 Drain1 2 Source1 3 Source1 4 Gate1 D1 D2 5 Gate2 S2 S1 6 Source2 S2 S1 7 Source2 G2 D1 8 Drain2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

 8.7. Size:74K  kexin
 ftd2011.pdf

SMD Type MOSFET Dual N-Channel Enhancement Mode MOSFET FTD2011 TSSOP-8 Unit mm Features RDS(ON)=30m Max. @VGS=4V RDS(ON)=45m Max. @VGS=2.5V 1 Drain1 2 Source1 3 Source1 4 Gate1 5 Gate2 6 Source2 D1 D2 7 Source2 S1 S2 8 Drain2 S1 S2 G1 G2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V G