All MOSFET. FTD2017 Datasheet

 

FTD2017 Datasheet and Replacement


   Type Designator: FTD2017
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 330 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TSSOP8
 

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FTD2017 Datasheet (PDF)

 ..1. Size:42K  sanyo
 ftd2017.pdf pdf_icon

FTD2017

Ordering number:ENN6361N-Channel Silicon MOSFETFTD2017Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2017] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source28

 ..2. Size:2022K  cn vbsemi
 ftd2017.pdf pdf_icon

FTD2017

FTD2017www.VBsemi.twDual N-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.022 at VGS = 4.5 V Available6.625RoHS*0.032 at VGS = 2.5 V 5.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATIN

 0.1. Size:985K  cn vbsemi
 ftd2017a.pdf pdf_icon

FTD2017

FTD2017Awww.VBsemi.twDual N-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.022 at VGS = 4.5 V Available6.625RoHS*0.032 at VGS = 2.5 V 5.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATI

 8.1. Size:41K  sanyo
 ftd2014.pdf pdf_icon

FTD2017

Ordering number:ENN6267N-Channel Silicon MOSFETFTD2014Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2014] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 43 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source2

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Datasheet: FQU13N06 , FQU13N10 , FR120N , FR2307Z , FR5305 , FR5505 , FR9N20D , FSS210 , IRF640 , FTD2017A , FTU36N06N , FU120N , FU9024N , FW232A-TL-E , FW342-TL , G2306A , G2309 .

History: 2SK2671

Keywords - FTD2017 MOSFET datasheet

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