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FTD2017 Specs and Replacement

Type Designator: FTD2017

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 330 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TSSOP8

FTD2017 substitution

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FTD2017 datasheet

 ..1. Size:42K  sanyo
ftd2017.pdf pdf_icon

FTD2017

Ordering number ENN6361 N-Channel Silicon MOSFET FTD2017 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 2.5V drive. 2155A Mounting height 1.1mm. [FTD2017] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 1 4 3 Source1 0.125 4 Gate1 0.25 5 Gate2 6 Source2 7 Source2 8... See More ⇒

 ..2. Size:2022K  cn vbsemi
ftd2017.pdf pdf_icon

FTD2017

FTD2017 www.VBsemi.tw Dual N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.022 at VGS = 4.5 V Available 6.6 25 RoHS* 0.032 at VGS = 2.5 V 5.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RATIN... See More ⇒

 0.1. Size:985K  cn vbsemi
ftd2017a.pdf pdf_icon

FTD2017

FTD2017A www.VBsemi.tw Dual N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.022 at VGS = 4.5 V Available 6.6 25 RoHS* 0.032 at VGS = 2.5 V 5.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RATI... See More ⇒

 8.1. Size:41K  sanyo
ftd2014.pdf pdf_icon

FTD2017

Ordering number ENN6267 N-Channel Silicon MOSFET FTD2014 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 2.5V drive. 2155A Mounting height 1.1mm. [FTD2014] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 1 4 3 Source1 0.125 4 Gate1 0.25 5 Gate2 6 Source2 7 Source2 ... See More ⇒

Detailed specifications: FQU13N06, FQU13N10, FR120N, FR2307Z, FR5305, FR5505, FR9N20D, FSS210, IRFP460, FTD2017A, FTU36N06N, FU120N, FU9024N, FW232A-TL-E, FW342-TL, G2306A, G2309

Keywords - FTD2017 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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