FCPF13N60NT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FCPF13N60NT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.258 Ohm
Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET FCPF13N60NT

FCPF13N60NT Datasheet (PDF)

..1. Size:898K fairchild semi
fcp13n60n fcpf13n60nt.pdf

August 2009SupreMOSTMFCP13N60N / FCPF13N60NTN-Channel MOSFET 600V, 13A, 0.258Features Description RDS(on) = 0.244 ( Typ.) @ VGS = 10V, ID = 6.5A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 30.4nC)process that differentiates it from preceding multi-epi based

..2. Size:785K onsemi
fcp13n60n fcpf13n60nt.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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fcpf13n60nt.pdf

isc N-Channel MOSFET Transistor FCPF13N60NTFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

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fcpf1300n80z.pdf

July 2014FCPF1300N80ZN-Channel SuperFET II MOSFET800 V, 4 A, 1.3 Features Description RDS(on) = 1.05 Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 16.2 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 1.57

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fcpf1300n80z.pdf

8.3. Size:276K inchange semiconductor
fcpf1300n80z.pdf

isc N-Channel MOSFET Transistor FCPF1300N80ZFEATURES Drain-source on-resistance:RDS(on) 1.3@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC - DC Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 800 VDSSV

Otros transistores... FCP4N60 , STU434S , FCP7N60 , STU432S , FCP9N60N , STU432L , FCPF11N60NT , STU428S , IRF530 , STU426S , FCPF16N60NT , STU421S , FCPF22N60NT , STU420S , FCPF7N60 , STU419S , FCPF7N60NT .

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