FCPF13N60NT
MOSFET. Datasheet pdf. Equivalent
Type Designator: FCPF13N60NT
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 33.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 13
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 30.4
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.258
Ohm
Package:
TO220F
FCPF13N60NT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCPF13N60NT
Datasheet (PDF)
..1. Size:898K fairchild semi
fcp13n60n fcpf13n60nt.pdf
August 2009SupreMOSTMFCP13N60N / FCPF13N60NTN-Channel MOSFET 600V, 13A, 0.258Features Description RDS(on) = 0.244 ( Typ.) @ VGS = 10V, ID = 6.5A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 30.4nC)process that differentiates it from preceding multi-epi based
..2. Size:785K onsemi
fcp13n60n fcpf13n60nt.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
..3. Size:248K inchange semiconductor
fcpf13n60nt.pdf
isc N-Channel MOSFET Transistor FCPF13N60NTFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
8.1. Size:991K fairchild semi
fcpf1300n80z.pdf
July 2014FCPF1300N80ZN-Channel SuperFET II MOSFET800 V, 4 A, 1.3 Features Description RDS(on) = 1.05 Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 16.2 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 1.57
8.2. Size:758K onsemi
fcpf1300n80z.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.3. Size:276K inchange semiconductor
fcpf1300n80z.pdf
isc N-Channel MOSFET Transistor FCPF1300N80ZFEATURES Drain-source on-resistance:RDS(on) 1.3@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC - DC Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 800 VDSSV
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