Справочник MOSFET. FCPF13N60NT

 

FCPF13N60NT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FCPF13N60NT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 33.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 30.4 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.258 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для FCPF13N60NT

 

 

FCPF13N60NT Datasheet (PDF)

 ..1. Size:898K  fairchild semi
fcp13n60n fcpf13n60nt.pdf

FCPF13N60NT FCPF13N60NT

August 2009SupreMOSTMFCP13N60N / FCPF13N60NTN-Channel MOSFET 600V, 13A, 0.258Features Description RDS(on) = 0.244 ( Typ.) @ VGS = 10V, ID = 6.5A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 30.4nC)process that differentiates it from preceding multi-epi based

 ..2. Size:785K  onsemi
fcp13n60n fcpf13n60nt.pdf

FCPF13N60NT FCPF13N60NT

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:248K  inchange semiconductor
fcpf13n60nt.pdf

FCPF13N60NT FCPF13N60NT

isc N-Channel MOSFET Transistor FCPF13N60NTFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 8.1. Size:991K  fairchild semi
fcpf1300n80z.pdf

FCPF13N60NT FCPF13N60NT

July 2014FCPF1300N80ZN-Channel SuperFET II MOSFET800 V, 4 A, 1.3 Features Description RDS(on) = 1.05 Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 16.2 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 1.57

 8.2. Size:758K  onsemi
fcpf1300n80z.pdf

FCPF13N60NT FCPF13N60NT

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.3. Size:276K  inchange semiconductor
fcpf1300n80z.pdf

FCPF13N60NT FCPF13N60NT

isc N-Channel MOSFET Transistor FCPF1300N80ZFEATURES Drain-source on-resistance:RDS(on) 1.3@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC - DC Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 800 VDSSV

Другие MOSFET... FCP4N60 , STU434S , FCP7N60 , STU432S , FCP9N60N , STU432L , FCPF11N60NT , STU428S , IRF530 , STU426S , FCPF16N60NT , STU421S , FCPF22N60NT , STU420S , FCPF7N60 , STU419S , FCPF7N60NT .

 

 
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