IRF540ZP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF540ZP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 355 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 220 nS

Cossⓘ - Capacitancia de salida: 210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 typ Ohm

Encapsulados: TO220AB

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IRF540ZP datasheet

 ..1. Size:2107K  cn vbsemi
 irf540zp.pdf pdf_icon

IRF540ZP

IRF540ZP www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.018 at VGS = 10 V 100 70a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G G D S S Top View N-Channel MOSFET ABSOLUTE MA

 0.1. Size:302K  international rectifier
 irf540zpbf.pdf pdf_icon

IRF540ZP

PD - 94758 IRF540Z AUTOMOTIVE MOSFET IRF540ZS IRF540ZL Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 26.5m G Description ID = 36A Specifically designed for Automotive applications, S this HEXFET Power MOSFE

 7.1. Size:326K  international rectifier
 auirf540zstrl.pdf pdf_icon

IRF540ZP

PD - 96326 AUTOMOTIVE GRADE AUIRF540Z AUIRF540ZS Features HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance V(BR)DSS 100V l 175 C Operating Temperature RDS(on) typ. 21m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 26.5m l Lead-Free, RoHS Compliant ID 36A l Automotive Qualified * S Description Specifically designe

 7.2. Size:173K  international rectifier
 irf540z.pdf pdf_icon

IRF540ZP

PD - 94644 IRF540Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 29.5m 175 C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 34A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes t

MOSTRAR MÁS

Otros transistores... IM2132, IM4435G, IPP048N04, IPP048N06, IRF3410, IRF4435TR, IRF5305STR, IRF540NSTRPBF, IRF530, IRF5802TR, IRF5803TRPBF, IRF5805TRPBF, IRF5851TR, IRF610P, IRF630P, IRF640P, IRF650AP