IRF540ZP - Даташиты. Аналоги. Основные параметры

IRF540ZPwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.018 at VGS = 10 V10070aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGG D SSTop ViewN-Channel MOSFETABSOLUTE MA

PD - 94758IRF540ZAUTOMOTIVE MOSFETIRF540ZSIRF540ZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 26.5mGDescriptionID = 36ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE

PD - 96326AUTOMOTIVE GRADEAUIRF540ZAUIRF540ZSFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance V(BR)DSS100Vl 175C Operating TemperatureRDS(on) typ.21ml Fast Switchingl Repetitive Avalanche Allowed up to TjmaxGmax. 26.5ml Lead-Free, RoHS CompliantID 36Al Automotive Qualified *SDescriptionSpecifically designe

PD - 94644IRF540ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 29.5m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 34ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes t

PD - 94758IRF540ZAUTOMOTIVE MOSFETIRF540ZSIRF540ZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 26.5mGDescriptionID = 36ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE

PD - 95531AIRF540ZPbFIRF540ZSPbFIRF540ZLPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 26.5mG Lead-FreeID = 36ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremel

AUIRF540Z AUTOMOTIVE GRADE AUIRF540ZS Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 175C Operating Temperature 21m Fast Switching max. 26.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 36A Automotive Qualified * Description D

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF540ZIIRF540ZFEATURESStatic drain-source on-resistance:RDS(on) 0.0265Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Isc N-Channel MOSFET Transistor IRF540ZLFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Isc N-Channel MOSFET Transistor IRF540ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt