All MOSFET. IRF540ZP Datasheet

 

IRF540ZP Datasheet and Replacement


   Type Designator: IRF540ZP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 355 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 90 nC
   tr ⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018(typ) Ohm
   Package: TO220AB
 

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IRF540ZP Datasheet (PDF)

 ..1. Size:2107K  cn vbsemi
 irf540zp.pdf pdf_icon

IRF540ZP

IRF540ZPwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.018 at VGS = 10 V10070aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGG D SSTop ViewN-Channel MOSFETABSOLUTE MA

 0.1. Size:302K  international rectifier
 irf540zpbf.pdf pdf_icon

IRF540ZP

PD - 94758IRF540ZAUTOMOTIVE MOSFETIRF540ZSIRF540ZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 26.5mGDescriptionID = 36ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE

 7.1. Size:326K  international rectifier
 auirf540zstrl.pdf pdf_icon

IRF540ZP

PD - 96326AUTOMOTIVE GRADEAUIRF540ZAUIRF540ZSFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance V(BR)DSS100Vl 175C Operating TemperatureRDS(on) typ.21ml Fast Switchingl Repetitive Avalanche Allowed up to TjmaxGmax. 26.5ml Lead-Free, RoHS CompliantID 36Al Automotive Qualified *SDescriptionSpecifically designe

 7.2. Size:173K  international rectifier
 irf540z.pdf pdf_icon

IRF540ZP

PD - 94644IRF540ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 29.5m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 34ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes t

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