IRF5851TR Todos los transistores

 ..1. Size:823K  cn vbsemi
 irf5851tr.pdf

IRF5851TR www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.083 at

 7.1. Size:172K  international rectifier
 irf5851.pdf

PD-93998A IRF5851 HEXFET Power MOSFET l Ultra Low On-Resistance N-Ch P-Ch l Dual N and P Channel MOSFET G1 D1 1 6 l Surface Mount VDSS 20V -20V l Available in Tape & Reel S1 S2 2 5 l Low Gate Charge G2 3 4 D2 RDS(on) 0.090 0.135 Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on

 8.1. Size:239K  international rectifier
 irf5852.pdf

PD - 93999 IRF5852 HEXFET Power MOSFET ) VDSS RDS(on) max ( ) ID ) ) ) Ultra Low On-Resistance Dual N-Channel MOSFET 20 V 0.090@VGS = 4.5V 2.7A Surface Mount 0.120@VGS = 2.5V 2.2A Available in Tape & Reel Low Gate Charge Description These N-channel MOSFETs from International Rectifier G1 1 6 D1 utilize advanced processing techniques to achieve the extremel

 8.2. Size:126K  international rectifier
 irf5850.pdf

PD - 93947 IRF5850 HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET VDSS = -20V Surface Mount Available in Tape & Reel Low Gate Charge RDS(on) = 0.135 Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the desi