All MOSFET. IRF5851TR Datasheet

 

IRF5851TR MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF5851TR
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.6(min) V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.1 nC
   trⓘ - Rise Time: 9 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TSOP6

 IRF5851TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF5851TR Datasheet (PDF)

 ..1. Size:823K  cn vbsemi
irf5851tr.pdf

IRF5851TR
IRF5851TR

IRF5851TRwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at

 7.1. Size:172K  international rectifier
irf5851.pdf

IRF5851TR
IRF5851TR

PD-93998AIRF5851HEXFET Power MOSFETl Ultra Low On-ResistanceN-Ch P-Chl Dual N and P Channel MOSFETG1 D11 6l Surface MountVDSS 20V -20Vl Available in Tape & ReelS1S2 2 5l Low Gate ChargeG2 3 4 D2RDS(on) 0.090 0.135DescriptionThese N and P channel MOSFETs from InternationalRectifier utilize advanced processing techniques to achievethe extremely low on

 8.1. Size:239K  international rectifier
irf5852.pdf

IRF5851TR
IRF5851TR

PD - 93999IRF5852HEXFET Power MOSFET)VDSS RDS(on) max () ID))) Ultra Low On-Resistance Dual N-Channel MOSFET 20 V 0.090@VGS = 4.5V 2.7A Surface Mount0.120@VGS = 2.5V 2.2A Available in Tape & Reel Low Gate ChargeDescriptionThese N-channel MOSFETs from International RectifierG1 1 6 D1utilize advanced processing techniques to achieve theextremel

 8.2. Size:126K  international rectifier
irf5850.pdf

IRF5851TR
IRF5851TR

PD - 93947IRF5850HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFETVDSS = -20V Surface Mount Available in Tape & Reel Low Gate ChargeRDS(on) = 0.135Top ViewDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This benefitprovides the desi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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