IRF7470TRPBF-10 Todos los transistores

 

IRF7470TRPBF-10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF7470TRPBF-10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 33 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01(typ) Ohm
   Paquete / Cubierta: SO8

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IRF7470TRPBF-10 Datasheet (PDF)

 0.1. Size:845K  cn vbsemi
irf7470trpbf-10.pdf

IRF7470TRPBF-10 IRF7470TRPBF-10

IRF7470TRPBF&-10www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous

 7.1. Size:119K  international rectifier
irf7470.pdf

IRF7470TRPBF-10 IRF7470TRPBF-10

PD- 93913CIRF7470SMPS MOSFETApplications HEXFET Power MOSFET High Frequency DC-DC ConvertersVDSS RDS(on) max IDwith Synchronous Rectification 40V 13m 10ABenefits Ultra-Low Gate ImpedanceAA Very Low RDS(on) at 4.5V VGS1 8S D2 7 Fully Characterized Avalanche VoltageS Dand Current3 6S D4 5G DSO-8Top ViewAbsolute Maximum RatingsSymbol Paramet

 7.2. Size:128K  international rectifier
irf7470pbf.pdf

IRF7470TRPBF-10 IRF7470TRPBF-10

PD- 95276IRF7470PbFSMPS MOSFETApplications HEXFET Power MOSFETl High Frequency DC-DC ConvertersVDSS RDS(on) max IDwith Synchronous Rectification 40V 13m 10Al Lead-FreeBenefitsl Ultra-Low Gate ImpedanceAA1 8l Very Low RDS(on) at 4.5V VGSS D2 7S Dl Fully Characterized Avalanche Voltageand Current3 6S D4 5G DSO-8Top ViewAbsolute Maximum Rati

 7.3. Size:128K  infineon
irf7470pbf.pdf

IRF7470TRPBF-10 IRF7470TRPBF-10

PD- 95276IRF7470PbFSMPS MOSFETApplications HEXFET Power MOSFETl High Frequency DC-DC ConvertersVDSS RDS(on) max IDwith Synchronous Rectification 40V 13m 10Al Lead-FreeBenefitsl Ultra-Low Gate ImpedanceAA1 8l Very Low RDS(on) at 4.5V VGSS D2 7S Dl Fully Characterized Avalanche Voltageand Current3 6S D4 5G DSO-8Top ViewAbsolute Maximum Rati

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