IRF7470TRPBF-10 Datasheet and Replacement
Type Designator: IRF7470TRPBF-10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01(typ) Ohm
Package: SO8
IRF7470TRPBF-10 substitution
IRF7470TRPBF-10 Datasheet (PDF)
irf7470trpbf-10.pdf
IRF7470TRPBF&-10www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous
irf7470.pdf
PD- 93913CIRF7470SMPS MOSFETApplications HEXFET Power MOSFET High Frequency DC-DC ConvertersVDSS RDS(on) max IDwith Synchronous Rectification 40V 13m 10ABenefits Ultra-Low Gate ImpedanceAA Very Low RDS(on) at 4.5V VGS1 8S D2 7 Fully Characterized Avalanche VoltageS Dand Current3 6S D4 5G DSO-8Top ViewAbsolute Maximum RatingsSymbol Paramet
irf7470pbf.pdf
PD- 95276IRF7470PbFSMPS MOSFETApplications HEXFET Power MOSFETl High Frequency DC-DC ConvertersVDSS RDS(on) max IDwith Synchronous Rectification 40V 13m 10Al Lead-FreeBenefitsl Ultra-Low Gate ImpedanceAA1 8l Very Low RDS(on) at 4.5V VGSS D2 7S Dl Fully Characterized Avalanche Voltageand Current3 6S D4 5G DSO-8Top ViewAbsolute Maximum Rati
Datasheet: IRF7416TRPBF , IRF7424TRPBF , IRF7425TR , IRF7455TR , IRF7463TR , IRF7467TR , IRF7468TR , IRF7469TR , AO4468 , IRF7471TR , IRF7473TR , IRF7475TRP , IRF7478TR , IRF7751GTR , IRF7807ATR , IRF7811AVTR , IRF7811WTR .
Keywords - IRF7470TRPBF-10 MOSFET datasheet
IRF7470TRPBF-10 cross reference
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IRF7470TRPBF-10 substitution
IRF7470TRPBF-10 replacement
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