FDA032N08 Todos los transistores

 

FDA032N08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDA032N08
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 235 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: TO3PN

 Búsqueda de reemplazo de MOSFET FDA032N08

 

FDA032N08 Datasheet (PDF)

 ..1. Size:547K  fairchild semi
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FDA032N08

January 2009 FDA032N08 tm N-Channel PowerTrench MOSFET 75V, 235A, 3.2m Features Description RDS(on) = 2.5m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s adcanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet Low Gate Charge maintain super

 ..2. Size:899K  onsemi
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FDA032N08

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FCPF22N60NT , STU420S , FCPF7N60 , STU419S , FCPF7N60NT , STU419A , FCPF9N60NT , STU417S , IRFZ48N , FDA15N65 , FDA16N50F109 , FDA18N50 , FDA20N50F109 , FDA20N50F , FDA24N40F , STU402D , FDA24N50 .

History: FDA28N50 | SDF08N50 | BL30N50-F | FQPF2N70

 

 
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