FDA032N08 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDA032N08  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 235 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm

Encapsulados: TO3PN

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FDA032N08 datasheet

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FDA032N08

January 2009 FDA032N08 tm N-Channel PowerTrench MOSFET 75V, 235A, 3.2m Features Description RDS(on) = 2.5m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s adcanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet Low Gate Charge maintain super

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FDA032N08

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FCPF22N60NT, STU420S, FCPF7N60, STU419S, FCPF7N60NT, STU419A, FCPF9N60NT, STU417S, IRFZ48N, FDA15N65, FDA16N50F109, FDA18N50, FDA20N50F109, FDA20N50F, FDA24N40F, STU402D, FDA24N50