FDA032N08 Datasheet and Replacement
Type Designator: FDA032N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 235 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: TO3PN
FDA032N08 substitution
FDA032N08 Datasheet (PDF)
fda032n08.pdf

January 2009FDA032N08tmN-Channel PowerTrench MOSFET 75V, 235A, 3.2mFeatures Description RDS(on) = 2.5m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon-ductors adcanced PowerTrench process that has been espe- Fast Switching Speedcially tailored to minimize the on-state resistance and yet Low Gate Chargemaintain super
fda032n08.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: FCPF22N60NT , STU420S , FCPF7N60 , STU419S , FCPF7N60NT , STU419A , FCPF9N60NT , STU417S , RU6888R , FDA15N65 , FDA16N50F109 , FDA18N50 , FDA20N50F109 , FDA20N50F , FDA24N40F , STU402D , FDA24N50 .
History: IRFBG30 | STU15N20 | DMB53D0UDW
Keywords - FDA032N08 MOSFET datasheet
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History: IRFBG30 | STU15N20 | DMB53D0UDW



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