IRFL9014TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFL9014TRPBF Datasheet (PDF)

..1. Size:1520K cn vbsemi
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IRFL9014TRPBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Pa

6.1. Size:256K international rectifier
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PD - 95153IRFL9014PbFHEXFET Power MOSFETl Surface Mountl Available in Tape & Reel DVDSS = -60Vl Dynamic dv/dt Ratingl Repetitive Avalanche Ratedl P-ChannelRDS(on) = 0.50l Fast SwitchingGl Ease of Parallelingl Lead-FreeID = -1.8ASDescriptinThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitchin

6.2. Size:222K international rectifier
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PD - 90863AIRFL9014HEXFET Power MOSFET Surface Mount Available in Tape & Reel DVDSS = -60V Dynamic dv/dt Rating Repetitive Avalanche Rated P-ChannelRDS(on) = 0.50 Fast SwitchingG Ease of ParallelingID = -1.8ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitching, ruggedized device

6.3. Size:168K vishay
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IRFL9014, SiHFL9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Surface MountRDS(on) ()VGS = - 10 V 0.50 Available in Tape and ReelQg (Max.) (nC) 12 Dynamic dV/dt RatingQgs (nC) 3.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 5.1 Fast SwitchingConfiguration Single

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