All MOSFET. IRFL9014TRPBF Datasheet

 

IRFL9014TRPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFL9014TRPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 4.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055(typ) Ohm
   Package: SOT223

 IRFL9014TRPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFL9014TRPBF Datasheet (PDF)

 ..1. Size:1520K  cn vbsemi
 irfl9014trpbf.pdf

IRFL9014TRPBF IRFL9014TRPBF

IRFL9014TRPBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Pa

 6.1. Size:256K  international rectifier
 irfl9014pbf.pdf

IRFL9014TRPBF IRFL9014TRPBF

PD - 95153IRFL9014PbFHEXFET Power MOSFETl Surface Mountl Available in Tape & Reel DVDSS = -60Vl Dynamic dv/dt Ratingl Repetitive Avalanche Ratedl P-ChannelRDS(on) = 0.50l Fast SwitchingGl Ease of Parallelingl Lead-FreeID = -1.8ASDescriptinThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitchin

 6.2. Size:222K  international rectifier
 irfl9014.pdf

IRFL9014TRPBF IRFL9014TRPBF

PD - 90863AIRFL9014HEXFET Power MOSFET Surface Mount Available in Tape & Reel DVDSS = -60V Dynamic dv/dt Rating Repetitive Avalanche Rated P-ChannelRDS(on) = 0.50 Fast SwitchingG Ease of ParallelingID = -1.8ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitching, ruggedized device

 6.3. Size:168K  vishay
 irfl9014 sihfl9014.pdf

IRFL9014TRPBF IRFL9014TRPBF

IRFL9014, SiHFL9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Surface MountRDS(on) ()VGS = - 10 V 0.50 Available in Tape and ReelQg (Max.) (nC) 12 Dynamic dV/dt RatingQgs (nC) 3.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 5.1 Fast SwitchingConfiguration Single

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IRF7665S2TR1PBF | SP8601 | NCE0157AK | VBFB16R02

 

 
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