IRFL9014TRPBF - аналоги, параметры транзистора

IRFL9014TRPBF даташит

..1. Size:1520K cn vbsemi
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IRFL9014TRPBF www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.055 at VGS = - 10 V - 7.0 APPLICATIONS - 60 30 nC 0.065 at VGS = - 4.5 V - 6.0 Load Switch S SOT-223 G D S D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Pa

6.1. Size:256K international rectifier
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PD - 95153 IRFL9014PbF HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel D VDSS = -60V l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel RDS(on) = 0.50 l Fast Switching G l Ease of Paralleling l Lead-Free ID = -1.8A S Descripti n Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switchin

6.2. Size:222K international rectifier
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PD - 90863A IRFL9014 HEXFET Power MOSFET Surface Mount Available in Tape & Reel D VDSS = -60V Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel RDS(on) = 0.50 Fast Switching G Ease of Paralleling ID = -1.8A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device

6.3. Size:168K vishay
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IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Surface Mount RDS(on) ( )VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 12 Dynamic dV/dt Rating Qgs (nC) 3.8 Repetitive Avalanche Rated P-Channel Qgd (nC) 5.1 Fast Switching Configuration Single

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