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FDA24N40F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDA24N40F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 235 W

Tensión drenaje-fuente (Vds): 400 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 23 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 46 nC

Resistencia drenaje-fuente RDS(on): 0.19 Ohm

Empaquetado / Estuche: TO3PN

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FDA24N40F Datasheet (PDF)

1.1. fda24n40f.pdf Size:687K _fairchild_semi

FDA24N40F
FDA24N40F

December 2007 UniFETTM FDA24N40F tm N-Channel MOSFET, FRFET 400V, 23A, 0.19? Features Descripition RDS(on) = 0.15? ( Typ.)@ VGS = 10V, ID = 11.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (Typ. 46nC) DMOS technology. This advanced technology has been especially tailored to Low Cr

4.1. fda24n50f.pdf Size:670K _fairchild_semi

FDA24N40F
FDA24N40F

November 2008 UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2? Features Description RDS(on) = 0.166? ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 65nC) DMOS technology. Low Crss ( Typ. 32pF) This advance technology has been especially tailore

4.2. fda24n50.pdf Size:688K _fairchild_semi

FDA24N40F
FDA24N40F

August 2008 UniFETTM FDA24N50 N-Channel MOSFET 500V, 24A, 0.19? Features Description RDS(on) = 0.16? ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 65nC) DMOS technology. Low Crss ( Typ. 35pF) This advance technology has been especially tailored to mi

 4.3. fda24n50f.pdf Size:209K _inchange_semiconductor

FDA24N40F
FDA24N40F

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FDA24N50F ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMET

Otros transistores... FCPF9N60NT , STU417S , FDA032N08 , FDA15N65 , FDA16N50_F109 , FDA18N50 , FDA20N50_F109 , FDA20N50F , 2SK105 , STU402D , FDA24N50 , FDA24N50F , FDA28N50 , FDA28N50F , FDA33N25 , FDA38N30 , FDA50N50 .

 

 
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