FDA24N40F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDA24N40F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 235 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Encapsulados: TO3PN
Búsqueda de reemplazo de FDA24N40F MOSFET
- Selecciónⓘ de transistores por parámetros
FDA24N40F datasheet
fda24n40f.pdf
December 2007 UniFETTM FDA24N40F tm N-Channel MOSFET, FRFET 400V, 23A, 0.19 Features Descripition RDS(on) = 0.15 ( Typ.)@ VGS = 10V, ID = 11.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (Typ. 46nC) DMOS technology. This advanced technology has been especially tailored
fda24n40f.pdf
isc N-Channel MOSFET Transistor FDA24N40F FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 190m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in high efficient switched mode power supplie
fda24n50.pdf
August 2008 UniFETTM FDA24N50 N-Channel MOSFET 500V, 24A, 0.19 Features Description RDS(on) = 0.16 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 65nC) DMOS technology. Low Crss ( Typ. 35pF) This advance technology has been especially t
fda24n50f.pdf
November 2008 UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2 Features Description RDS(on) = 0.166 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ. 65nC) DMOS technology. Low Crss ( Typ. 32pF) This advance technology has been esp
Otros transistores... FCPF9N60NT , STU417S , FDA032N08 , FDA15N65 , FDA16N50F109 , FDA18N50 , FDA20N50F109 , FDA20N50F , AON7403 , STU402D , FDA24N50 , FDA24N50F , FDA28N50 , FDA28N50F , FDA33N25 , FDA38N30 , FDA50N50 .
History: STP40N10
History: STP40N10
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