FDA24N40F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDA24N40F
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 235 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 23 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
Тип корпуса: TO3PN
FDA24N40F Datasheet (PDF)
fda24n40f.pdf
December 2007UniFETTMFDA24N40FtmN-Channel MOSFET, FRFET 400V, 23A, 0.19Features Descripition RDS(on) = 0.15 ( Typ.)@ VGS = 10V, ID = 11.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (Typ. 46nC)DMOS technology.This advanced technology has been especially tailored
fda24n40f.pdf
isc N-Channel MOSFET Transistor FDA24N40FFEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 190m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in high efficient switched modepower supplie
fda24n50.pdf
August 2008UniFETTMFDA24N50N-Channel MOSFET 500V, 24A, 0.19Features Description RDS(on) = 0.16 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 65nC)DMOS technology. Low Crss ( Typ. 35pF)This advance technology has been especially t
fda24n50f.pdf
November 2008UniFETTMFDA24N50FtmN-Channel MOSFET 500V, 24A, 0.2Features Description RDS(on) = 0.166 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 65nC)DMOS technology. Low Crss ( Typ. 32pF)This advance technology has been esp
fda24n50f.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fda24n50f.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDA24N50FFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
Другие MOSFET... FCPF9N60NT , STU417S , FDA032N08 , FDA15N65 , FDA16N50F109 , FDA18N50 , FDA20N50F109 , FDA20N50F , EMB04N03H , STU402D , FDA24N50 , FDA24N50F , FDA28N50 , FDA28N50F , FDA33N25 , FDA38N30 , FDA50N50 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918