FDA24N40F PDF and Equivalents Search

 

FDA24N40F Specs and Replacement

Type Designator: FDA24N40F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 235 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO3PN

FDA24N40F substitution

- MOSFET ⓘ Cross-Reference Search

 

FDA24N40F datasheet

 ..1. Size:687K  fairchild semi
fda24n40f.pdf pdf_icon

FDA24N40F

December 2007 UniFETTM FDA24N40F tm N-Channel MOSFET, FRFET 400V, 23A, 0.19 Features Descripition RDS(on) = 0.15 ( Typ.)@ VGS = 10V, ID = 11.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (Typ. 46nC) DMOS technology. This advanced technology has been especially tailored ... See More ⇒

 ..2. Size:258K  inchange semiconductor
fda24n40f.pdf pdf_icon

FDA24N40F

isc N-Channel MOSFET Transistor FDA24N40F FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 190m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in high efficient switched mode power supplie... See More ⇒

 8.1. Size:688K  fairchild semi
fda24n50.pdf pdf_icon

FDA24N40F

August 2008 UniFETTM FDA24N50 N-Channel MOSFET 500V, 24A, 0.19 Features Description RDS(on) = 0.16 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 65nC) DMOS technology. Low Crss ( Typ. 35pF) This advance technology has been especially t... See More ⇒

 8.2. Size:670K  fairchild semi
fda24n50f.pdf pdf_icon

FDA24N40F

November 2008 UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2 Features Description RDS(on) = 0.166 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ. 65nC) DMOS technology. Low Crss ( Typ. 32pF) This advance technology has been esp... See More ⇒

Detailed specifications: FCPF9N60NT , STU417S , FDA032N08 , FDA15N65 , FDA16N50F109 , FDA18N50 , FDA20N50F109 , FDA20N50F , AON7403 , STU402D , FDA24N50 , FDA24N50F , FDA28N50 , FDA28N50F , FDA33N25 , FDA38N30 , FDA50N50 .

History: STP4NA80 | STP50N05L

Keywords - FDA24N40F MOSFET specs

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