IRLML2803TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLML2803TRPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 4.5 nC
   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: SOT23

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IRLML2803TRPBF Datasheet (PDF)

..1. Size:893K cn vbsemi
irlml2803trpbf.pdf

IRLML2803TRPBFwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-

5.1. Size:221K international rectifier
irlml2803gpbf.pdf

PD - 96164AIRLML2803GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFET G 1VDSS = 30Vl SOT-23 Footprint3 Dl Low Profile (

5.2. Size:221K international rectifier
irlml2803pbf.pdf

PD - 94974BIRLML2803PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFETG 1VDSS = 30Vl SOT-23 Footprintl Low Profile (

5.3. Size:100K international rectifier
irlml2803.pdf

PD - 9.1258CIRLML2803HEXFET Power MOSFET Generation V TechnologyD Ultra Low On-Resistance N-Channel MOSFETVDSS = 30V SOT-23 Footprint Low Profile (

5.4. Size:241K international rectifier
irlml2803pbf-1 irlml5103pbf-1.pdf

IRLML2803PbF-1HEXFET Power MOSFETVDS 30 VRDS(on) max G 10.25 (@V = 10V)GSQg (typical) 3.3 nC 3 DID 1.2 AS 2(@T = 25C)AMicro3Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Industr

5.5. Size:252K infineon
irlml2803pbf.pdf

IRLML2803PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 30Vl Low Profile (

5.6. Size:738K cn shikues
irlml2803.pdf

IRLML2803SOT-23 Plastic-Encapsulate Transistors MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 VID Drain current 2.0 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARAC

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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