IRLML2803TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLML2803TRPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.1 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 5.3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 4.5 nC
Tiempo de subida (tr): 50 nS
Conductancia de drenaje-sustrato (Cd): 45 pF
Resistencia entre drenaje y fuente RDS(on): 0.03 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET IRLML2803TRPBF
IRLML2803TRPBF Datasheet (PDF)
irlml2803trpbf.pdf
IRLML2803TRPBFwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-
irlml2803gpbf.pdf
PD - 96164AIRLML2803GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFET G 1VDSS = 30Vl SOT-23 Footprint3 Dl Low Profile (
irlml2803pbf.pdf
PD - 94974BIRLML2803PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFETG 1VDSS = 30Vl SOT-23 Footprintl Low Profile (
irlml2803.pdf
PD - 9.1258CIRLML2803HEXFET Power MOSFET Generation V TechnologyD Ultra Low On-Resistance N-Channel MOSFETVDSS = 30V SOT-23 Footprint Low Profile (
irlml2803pbf-1 irlml5103pbf-1.pdf
IRLML2803PbF-1HEXFET Power MOSFETVDS 30 VRDS(on) max G 10.25 (@V = 10V)GSQg (typical) 3.3 nC 3 DID 1.2 AS 2(@T = 25C)AMicro3Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Industr
irlml2803pbf.pdf
IRLML2803PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 30Vl Low Profile (
irlml2803.pdf
IRLML2803SOT-23 Plastic-Encapsulate Transistors MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 VID Drain current 2.0 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARAC
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
