IRLML2803TRPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLML2803TRPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 5.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.5 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT23
IRLML2803TRPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLML2803TRPBF Datasheet (PDF)
irlml2803trpbf.pdf
IRLML2803TRPBFwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-
irlml2803gpbf.pdf
PD - 96164AIRLML2803GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFET G 1VDSS = 30Vl SOT-23 Footprint3 Dl Low Profile (
irlml2803pbf.pdf
PD - 94974BIRLML2803PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFETG 1VDSS = 30Vl SOT-23 Footprintl Low Profile (
irlml2803.pdf
PD - 9.1258CIRLML2803HEXFET Power MOSFET Generation V TechnologyD Ultra Low On-Resistance N-Channel MOSFETVDSS = 30V SOT-23 Footprint Low Profile (
irlml2803pbf-1 irlml5103pbf-1.pdf
IRLML2803PbF-1HEXFET Power MOSFETVDS 30 VRDS(on) max G 10.25 (@V = 10V)GSQg (typical) 3.3 nC 3 DID 1.2 AS 2(@T = 25C)AMicro3Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Industr
irlml2803pbf.pdf
IRLML2803PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 30Vl Low Profile (
irlml2803.pdf
IRLML2803SOT-23 Plastic-Encapsulate Transistors MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 VID Drain current 2.0 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARAC
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: ME2306AS
