All MOSFET. IRLML2803TRPBF Datasheet

 

IRLML2803TRPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLML2803TRPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.5 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT23

 IRLML2803TRPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLML2803TRPBF Datasheet (PDF)

 ..1. Size:893K  cn vbsemi
 irlml2803trpbf.pdf

IRLML2803TRPBF IRLML2803TRPBF

IRLML2803TRPBFwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-

 5.1. Size:221K  international rectifier
 irlml2803gpbf.pdf

IRLML2803TRPBF IRLML2803TRPBF

PD - 96164AIRLML2803GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFET G 1VDSS = 30Vl SOT-23 Footprint3 Dl Low Profile (

 5.2. Size:221K  international rectifier
 irlml2803pbf.pdf

IRLML2803TRPBF IRLML2803TRPBF

PD - 94974BIRLML2803PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFETG 1VDSS = 30Vl SOT-23 Footprintl Low Profile (

 5.3. Size:100K  international rectifier
 irlml2803.pdf

IRLML2803TRPBF IRLML2803TRPBF

PD - 9.1258CIRLML2803HEXFET Power MOSFET Generation V TechnologyD Ultra Low On-Resistance N-Channel MOSFETVDSS = 30V SOT-23 Footprint Low Profile (

 5.4. Size:241K  international rectifier
 irlml2803pbf-1 irlml5103pbf-1.pdf

IRLML2803TRPBF IRLML2803TRPBF

IRLML2803PbF-1HEXFET Power MOSFETVDS 30 VRDS(on) max G 10.25 (@V = 10V)GSQg (typical) 3.3 nC 3 DID 1.2 AS 2(@T = 25C)AMicro3Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Industr

 5.5. Size:252K  infineon
 irlml2803pbf.pdf

IRLML2803TRPBF IRLML2803TRPBF

IRLML2803PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 30Vl Low Profile (

 5.6. Size:738K  cn shikues
 irlml2803.pdf

IRLML2803TRPBF IRLML2803TRPBF

IRLML2803SOT-23 Plastic-Encapsulate Transistors MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 VID Drain current 2.0 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARAC

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