IRLR014NTRP MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRLR014NTRP datasheet

..1. Size:268K cn vbsemi
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IRLR014NTRP www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters M

6.1. Size:287K international rectifier
irlr014npbf irlu014npbf.pdf pdf_icon

PD - 95551B IRLR014NPbF IRLU014NPbF HEXFET Power MOSFET l Logic-Level Gate Drive l Surface Mount (IRLR024N) D l Straight Lead (IRLU024N) VDSS = 55V l Advanced Process Technology l Fast Switching RDS(on) = 0.14 l Fully Avalanche Rated G l Lead-Free ID = 10A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev

6.2. Size:116K international rectifier
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PD- 94350 IRLR/U014N HEXFET Power MOSFET Logic-Level Gate Drive D Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process Technology RDS(on) = 0.14 G Fast Switching Fully Avalanche Rated ID = 10A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

6.3. Size:203K international rectifier
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AUTOMOTIVE GRADE PD - 97740 AUIRLR014N Advanced Planar Technology Logic-Level Gate Drive HEXFET Power MOSFET Low On-Resistance D Dynamic dV/dT Rating V(BR)DSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 0.14 G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 10A S Lead-Free, RoHS Compliant Auto