IRLR014NTRP
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLR014NTRP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 41.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 16.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19.8
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 85
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0732
Ohm
Package:
TO252
IRLR014NTRP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLR014NTRP
Datasheet (PDF)
..1. Size:268K cn vbsemi
irlr014ntrp.pdf
IRLR014NTRPwww.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters M
6.1. Size:287K international rectifier
irlr014npbf irlu014npbf.pdf
PD - 95551BIRLR014NPbFIRLU014NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Surface Mount (IRLR024N)Dl Straight Lead (IRLU024N)VDSS = 55Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.14l Fully Avalanche RatedGl Lead-FreeID = 10ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achiev
6.2. Size:116K international rectifier
irlr014n irlu014n.pdf
PD- 94350IRLR/U014NHEXFET Power MOSFET Logic-Level Gate DriveD Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process TechnologyRDS(on) = 0.14G Fast Switching Fully Avalanche RatedID = 10ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possible on-resistance
6.3. Size:203K international rectifier
auirlr014n.pdf
AUTOMOTIVE GRADEPD - 97740AUIRLR014N Advanced Planar Technology Logic-Level Gate DriveHEXFET Power MOSFET Low On-ResistanceD Dynamic dV/dT RatingV(BR)DSS55V 175C Operating Temperature Fast SwitchingRDS(on) max.0.14G Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxID 10AS Lead-Free, RoHS Compliant Auto
6.4. Size:110K international rectifier
irlr014n.pdf
PD- 94350IRLR/U014NHEXFET Power MOSFET Logic-Level Gate DriveD Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process TechnologyRDS(on) = 0.14G Fast Switching Fully Avalanche RatedID = 10ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possible on-resistance
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