100N03A Todos los transistores

 ..1. Size:905K  umw-ic
 100n03a.pdf

R UMW UMW 100N03A 30V N-Channel Power UMW 100N03A Mosfet General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 30V,ID =90A RDS(ON),3.8 m (Typ) @ VGS =10V RDS(ON), 6.4m (Typ) @ VGS =4.5V Low on resistance Low gate charge Fast s

 0.1. Size:1017K  feihonltd
 fhp100n03a.pdf

N N-CHANNEL MOSFET FHP100N03A 2 1

 0.2. Size:1061K  feihonltd
 fhu100n03a fhd100n03a.pdf

2 1

 0.3. Size:628K  jiejie micro
 jmtg100n03a.pdf

JMTG100N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 30A Load Switch RDS(ON)

 0.4. Size:980K  jiejie micro
 jmtk100n03a.pdf

JMTK100N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 40A Load Switch RDS(ON)

 0.5. Size:1101K  jiejie micro
 jmtq100n03a.pdf

JMTQ100N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 25A Load Switch RDS(ON)

 0.6. Size:1377K  cn apm
 ap100n03ad.pdf

AP100N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP100N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS D R