100N03A Datasheet and Replacement
Type Designator: 100N03A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36.4 nS
Cossⓘ - Output Capacitance: 248 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
Package: TO252
100N03A substitution
100N03A Datasheet (PDF)
100n03a.pdf
RUMW UMW 100N03A30V N-Channel PowerUMW 100N03AMosfetGeneral DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent Rdsonand low gate charge. Which accords with the RoHS standard.FeaturesVDS = 30V,ID =90ARDS(ON),3.8 m(Typ) @ VGS =10VRDS(ON), 6.4m(Typ) @ VGS =4.5VLow on resistanceLow gate chargeFast s
jmtg100n03a.pdf
JMTG100N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 30A Load SwitchRDS(ON)
Datasheet: IRLR2905TR , IRLR2905ZTR , IRLR2908TR , IRLR3105TR , IRLR3410TR , IRLR3636TRPBF , IRLR8103VTR , IRLR8729TR , AON6414A , 30N03A , 35N06 , AO3402A , AO3403A , AO3409A , AO3413A , AO3414A , AO3416A .
Keywords - 100N03A MOSFET datasheet
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History: BSS223PW | 11N65TFS
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