30N03A Todos los transistores

 ..1. Size:926K  umw-ic
 30n03a.pdf

R UMW UMW 30N03A 30V N-Channel Power UMW 30N03A Mosfet General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 30V,ID =90A RDS(ON),3.9 m (Typ) @ VGS =10V RDS(ON), 6.5m (Typ) @ VGS =4.5V Low on resistance Low gate charge Fast swi

 0.1. Size:1587K  mcc
 mcg30n03a.pdf

MCG30N03A Features High Density Cell Design For Low RDS(ON) Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ord

 0.2. Size:988K  goford
 g30n03a.pdf

GOFORD G30N03A N-Channel Enhancement Mode Power MOSFET Description The G30N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)

 0.3. Size:1293K  cn yangzhou yangjie elec
 yjq30n03a.pdf

RoHS COMPLIANT YJQ30N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 30A D R ( at V =10V) 9 mohm DS(ON) GS R ( at V =4.5V) 13 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cell d