30N03A
MOSFET. Datasheet pdf. Equivalent
Type Designator: 30N03A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 105
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 90
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 41
nC
trⓘ - Rise Time: 36.4
nS
Cossⓘ -
Output Capacitance: 248
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005
Ohm
Package:
TO252
30N03A
Datasheet (PDF)
..1. Size:926K umw-ic
30n03a.pdf
RUMW UMW 30N03A30V N-Channel PowerUMW 30N03AMosfetGeneral DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent Rdsonand low gate charge. Which accords with the RoHS standard.FeaturesVDS = 30V,ID =90ARDS(ON),3.9 m(Typ) @ VGS =10VRDS(ON), 6.5m(Typ) @ VGS =4.5VLow on resistanceLow gate chargeFast swi
0.1. Size:1587K mcc
mcg30n03a.pdf
MCG30N03AFeatures High Density Cell Design For Low RDS(ON) Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation Epoxy Meets UL 94 V-0 Flammability RatingN-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ord
0.2. Size:988K goford
g30n03a.pdf
GOFORDG30N03AN-Channel Enhancement Mode Power MOSFET Description The G30N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)
0.3. Size:1293K cn yangzhou yangjie elec
yjq30n03a.pdf
RoHS COMPLIANT YJQ30N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 30A D R ( at V =10V) 9 mohm DS(ON) GS R ( at V =4.5V) 13 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cell d
Datasheet: WPB4002
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