AO3403A Todos los transistores

 ..1. Size:370K  umw-ic
 ao3403a.pdf

 8.1. Size:494K  aosemi
 ao3403.pdf

AO3403 30V P-Channel MOSFET General Description Product Summary VDS The AO3403 uses advanced trench technology to provide -30V excellent RDS(ON) and low gate charge. This device is ID (at VGS=-10V) -2.6A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)

 8.2. Size:308K  shenzhen
 ao3403.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3403 AO3403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3403 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V) device is suitable for use as a load switch or in PWM RDS(ON)

 8.3. Size:2405K  kexin
 ao3403-3.pdf

SMD Type MOSFET P-Channel MOSFET AO3403 (KO3403) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-30V ID =-2.6 A (VGS =-10V) RDS(ON) 115m (VGS =-10V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 150m (VGS =-4.5V) +0.1 1.9-0.2 RDS(ON) 200m (VGS =-2.5V) D D 1. Gate 2. Source 3. Drain G G S S Absolut

 8.4. Size:2391K  kexin
 ao3403.pdf

SMD Type MOSFET P-Channel MOSFET AO3403 (KO3403) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-30V ID =-2.6 A (VGS =-10V) 1 2 RDS(ON) 115m (VGS =-10V) +0.05 0.95+0.1 -0.1 0.1 -0.01 RDS(ON) 150m (VGS =-4.5V) 1.9+0.1 -0.1 RDS(ON) 200m (VGS =-2.5V) 1. Gate D D 2. Source 3. Drain G G S S Absolute Max